Effect of growth temperature of the confinement layer on cathodoluminescence properties of GaSb/GaAs quantum dot multilayer structures

Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Volumn , Issue , 2005, Pages 5-8

  Drozdowicz Tomsia, Krystyna ^a   Goldys, Ewa M ^a   Motlan, ^a,b  

^a MACQUARIE UNIVERSITY   (Australia)

^b UNIVERSITAS NEGERI MEDAN   (Indonesia)

Author keywords

AFM; Cathodoluminescence; GaSb; MOCVD growth; Quantum dot; Wetting layer

Indexed keywords

ATMOSPHERIC PRESSURE; ATMOSPHERICS; CATHODOLUMINESCENCE; CHEMICAL VAPOR DEPOSITION; GALLIUM ALLOYS; GROWTH TEMPERATURE; LIGHT EMISSION; LUMINESCENCE; MULTILAYERS; OPTICAL WAVEGUIDES; PRESSURE; QUANTUM ELECTRONICS;

(PL) PROPERTIES; CATHODOLUMINESCENCE (CL); CHEMICAL DEPOSITIONS; CL SPECTRA; GAAS(CSO); GASB/GAAS; GROWTH CONDITIONS; MICROELECTRONIC MATERIALS; MULTILAYER (ML); QUANTUM DOT (CO); QUANTUM DOTS (QDS); QUANTUM-DOT MULTILAYER STRUCTURES; RELATIVE POSITIONING; SEMI-INSULATING; STRUCTURES GROWN; WETTING LAYER (WL);

SEMICONDUCTOR QUANTUM DOTS;

EID: 46149086361     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/COMMAD.2004.1577478     Document Type: Conference Paper

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