Fundamental x-ray interaction limits in diagnostic imaging detectors: Frequency-dependent Swank noise

Medical Physics

Volumn 35, Issue 7, 2008, Pages 3194-3204

  Hajdok, G ^a,b,c   Battista, J J ^b,c   Cunningham, I A ^a,c,d  

^a ROBARTS RESEARCH INSTITUTE   (Canada)

^b LONDON REGIONAL CANCER PROGRAM   (Canada)

^c UNIVERSITY OF WESTERN ONTARIO   (Canada)

^d LONDON HEALTH SCIENCES CENTRE   (Canada)

Author keywords

Diagnostic x ray detectors; Diagnostic x ray imaging; Noise power spectrum; Swank factor

Indexed keywords

AMORPHOUS SILICON; BENCHMARKING; CESIUM IODIDE; IODINE COMPOUNDS; LAYERED SEMICONDUCTORS; LEAD COMPOUNDS; MAMMOGRAPHY; POWER SPECTRUM; QUANTUM EFFICIENCY; SELENIUM COMPOUNDS;

AMORPHOUS SILICON (A-SI); DETECTIVE QUANTUM EFFICIENCY; DIAGNOSTIC X-RAY IMAGING; HIGH-RESOLUTION IMAGING; NOISE POWER SPECTRUM; NORMALIZED NOISE POWER SPECTRUM; PHOTOELECTRIC CHARACTERISTICS; SWANK FACTORS;

X RAY DETECTORS;

CESIUM; LEAD; SELENIUM; SILICON DIOXIDE;

ARTICLE; COMPTON EFFECT; DIAGNOSTIC IMAGING; MAMMOGRAPHY; MODULATION TRANSFER FUNCTION; MONTE CARLO METHOD; PHOTON; PRIORITY JOURNAL; SIGNAL NOISE RATIO; X RAY;

EID: 46149085661     PISSN: 00942405     EISSN: None     Source Type: Journal    
DOI: 10.1118/1.2936412     Document Type: Article

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