Efficiency improvement of LDMOS transistors for base stations: Towards the theoretical limit

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Van Rijs, F ^a   Theeuwen, S J C H ^a  

^a NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS;

BASE STATIONS; EFFICIENCY IMPROVEMENTS; FUTURE PROSPECTS; HIGH-EFFICIENCY; LDMOS TRANSISTORS; PARASITIC ELEMENTS; SYSTEM CONCEPTS;

ELECTRON DEVICES;

EID: 46049097991     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346998     Document Type: Conference Paper

References (7)

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3. P.C.A. Hammes, H.F.F. Jos, F. van Rijs, S.J.C.H. Theeuwen, and K. Vennema., "High efficiency high power WCDMA LDMOS transistors for basestations.", Microwave J., Vol. 47, No. 4, p.94, 2004.
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