High efficiency, high power WCDMA LDMOS transistors for base stations

Microwave Journal

Volumn 47, Issue 4, 2004, Pages 94-101

  Hammes, Petra C A ^a   Jos, H F F ^a   Van Rijs, F ^a   Theeuwen, Steven J C H ^a   Vennema, Korné ^a  

^a NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

GATE ENGINEERING; LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR (LDMOS); PEAK-TO-AVERAGE-RATIO (PAR); RF POWER AMPLIFIERS;

CAPACITANCE; CODE DIVISION MULTIPLE ACCESS; COSTS; OPTIMIZATION; PINCH EFFECT; POWER AMPLIFIERS; RADIO FREQUENCY AMPLIFIERS; RELIABILITY; TRANSISTORS;

MOS DEVICES;

EID: 2342529044     PISSN: 01926225     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (4)

1. K. Vennema, "MCPA for UMTS Using the BLF4G22-100 LDMOS Transistor," Application Note, Philips Semiconductors, August 2003.
2. B. Arntz and K. Vennema, "BLF2022-90: Linear LDMOS Amplifier for 3GPP Applications in the 2110-2170 MHz Frequency Band," Application Note, Phillips Semiconductors, May 2001.
3. S. Xu, P. Foo, J. Wen, Y. Liu, F. Lin and C. Ren, "RF LDMOS with Extreme Low Parasitic Feedback Capacitance and High Hot Carrier Immunity," International Electron Devices Meeting Digest, 1999, pp. 201-204.
4. Xu, et al., "High Power Silicon RF LD-MOSFET Technology for 2.1 GHz Power Amplifier Applications," IEEE International Symposium on Power Semiconductor Devices Digest, 2003, pp. 190-194.