Improved resonance characteristics of GaAs beam resonators by epitaxially induced strain

Applied Physics Letters

Volumn 92, Issue 25, 2008, Pages

  Yamaguchi, H ^a   Kato, K ^a,b   Nakai, Y ^a,b   Onomitsu, K ^a   Warisawa, S ^b   Ishihara, S ^b  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL RESONATORS; OPTICAL DESIGN; RESONATORS; SEMICONDUCTING GALLIUM;

BEAM RESONATORS; INDUCED STRAIN; MICRO-MECHANICAL;

GALLIUM ALLOYS;

EID: 46049097966     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2952957     Document Type: Article

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