Tunnel injection active region in an oxide-confined vertical-cavity surface-emitting laser

IEEE Photonics Technology Letters

Volumn 9, Issue 6, 1997, Pages 716-718

  Huffaker, D L ^a   Oh, T H ^a   Deppe, D G ^a  

^a The University of Texas at Austin   (United States)

Author keywords

Laser resonators; Semiconductor lasers; Surface emitting lasers; Total device effects

Indexed keywords

ELECTRIC CURRENTS; HETEROJUNCTIONS; LASER RESONATORS; MIRRORS; MOLECULAR BEAM EPITAXY; OXIDES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

ELECTRONIC TUNNEL INJECTION; THRESHOLD CURRENTS; VERTICAL CAVITY SURFACE EMITTING LASERS; WET OXIDATION;

SEMICONDUCTOR LASERS;

EID: 0031162913     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.584967     Document Type: Article

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