High-pressure deuterium annealing for improving the reliability characteristics of silicon-oxide-nitride-oxide-silicon nonvolatile memory devices

Applied Physics Letters

Volumn 85, Issue 26, 2004, Pages 6415-6417

  Choi, Sangmoo ^a   Jang, Man ^a   Park, Hokyung ^a   Hwang, Hyunsang ^a   Jeon, Sanghun ^b   Kim, Juhyung ^b   Kim, Chungwoo ^b  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; DATA STORAGE EQUIPMENT; DEUTERIUM; ELECTRONS; HIGH PRESSURE EFFECTS; HIGH TEMPERATURE APPLICATIONS; HYDROGEN; NITRIDES; SECONDARY ION MASS SPECTROMETRY; SILICON COMPOUNDS; THICKNESS CONTROL;

INTERFACE TRAP; KINETIC ISOTOPES; NONVOLATILE MEMORY (NVM); POSTMETALLIZATION ANNEALING;

NONVOLATILE STORAGE;

EID: 13444270635     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1842363     Document Type: Article

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