Study of trap states in polyfluorene based devices by using TSC technique

Thin Solid Films

Volumn 516, Issue 20, 2008, Pages 7209-7213

  Renaud, C ^a   Huang, C H ^b   Lee, C W ^a,b   Le Rendu, P ^a   Nguyen, T P ^a  

^a INSTITUT DES MATÉRIAUX JEAN ROUXEL   (France)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Polyfluorene derivative; Thermally stimulated currents; Traps

Indexed keywords

COBALT; COBALT COMPOUNDS; ELECTRIC CURRENTS; TIN; TINNING; TITANIUM COMPOUNDS;

FLUORENYL; LIGHT EMITTING; POLYFLUORENE (PF); TEMPERATURE RANGES; TRAP STATES;

LIGHT EMITTING DIODES;

EID: 45849150428     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.12.063     Document Type: Article

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