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Volumn 516, Issue 20, 2008, Pages 6858-6862
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Fabrication of low defect density nanocrystalline silicon absorber layer and its application in thin-film solar cell
a
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Author keywords
Defect density; Nanocrystalline silicon; Solar cell; Thin film; Total gas flow rate
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Indexed keywords
AERODYNAMICS;
AUGER ELECTRON SPECTROSCOPY;
CURRENT DENSITY;
DEFECTS;
DEPOSITS;
DIRECT ENERGY CONVERSION;
ELECTRIC FAULT LOCATION;
ELECTRON SPIN RESONANCE SPECTROSCOPY;
FLOW OF GASES;
FLOW RATE;
FOURIER TRANSFORM INFRARED SPECTROSCOPY;
FOURIER TRANSFORMS;
GAS DYNAMICS;
INFRARED SPECTROSCOPY;
MICROFLUIDICS;
NANOCRYSTALLINE ALLOYS;
NANOCRYSTALLINE MATERIALS;
NANOCRYSTALLINE SILICON;
NANOSTRUCTURED MATERIALS;
NONMETALS;
PHOTOVOLTAIC CELLS;
PLASMA (HUMAN);
PLASMA DIAGNOSTICS;
PLASMAS;
SHORT CIRCUIT CURRENTS;
SILICON;
SILICON SOLAR CELLS;
SOLAR CELLS;
SOLAR ENERGY;
SOLAR EQUIPMENT;
SPECTROSCOPIC ANALYSIS;
SPECTRUM ANALYSIS;
SPIN DYNAMICS;
STRUCTURAL ANALYSIS;
STRUCTURAL PROPERTIES;
(100) SILICON;
(PL) PROPERTIES;
ABSORBER LAYERS;
CRYSTALLINITY;
ELECTRON SPIN RESONANCE (ESR);
ELSEVIER (CO);
FILL FACTOR (FF);
FOURIER TRANSFORM INFRARED (FT-IR);
LOW DEFECT DENSITIES;
MICRO STRUCTURAL;
NANO CRYSTALLINE;
NANOCRYSTALLINE SILICON FILMS;
PLASMA EXCITATION FREQUENCIES;
RAMAN ANALYSIS;
SHORT CIRCUIT (SC);
TOTAL GAS FLOW RATE;
DEFECT DENSITY;
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EID: 45849118037
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2007.12.048 Document Type: Article |
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Times cited : (17)
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References (11)
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