First principles calculation of isolated intermediate bands formation in a transition metal-doped chalcopyrite-type semiconductor

Physica Status Solidi (A) Applications and Materials Science

Volumn 203, Issue 6, 2006, Pages 1395-1401

  Palacios, P ^a   Sanchez K ^a   Conesa, J C ^b   Wahnon P ^a  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b INSTITUTO DE CATÁLISIS Y PETROLEOQUÍMICA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP; CHALCOPYRITE-TYPE SEMICONDUCTORS;

MAGNETIC MATERIALS; PHOTOVOLTAIC CELLS; PROBABILITY DENSITY FUNCTION; SEMICONDUCTOR MATERIALS; SOLAR CELLS;

TRANSITION METALS;

EID: 33646819012     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200566179     Document Type: Conference Paper

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