Rectifying diode made of individual gallium nitride nanowire

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 18, Issue 1-3, 2003, Pages 225-226

  Kim, Jae Ryoung ^a   Oh, Hwangyou ^a   So, Hye Mi ^a   Kim, Jinhee ^b   Kim, Ju Jin ^a  

^a Chonbuk National University   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

Author keywords

GaN; Nanowire; Schottky diode

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; ELECTROCHEMICAL ELECTRODES; ELECTRON TRANSITIONS; SCHOTTKY BARRIER DIODES; SYNTHESIS (CHEMICAL); WIRE;

NANOWIRES;

GALLIUM NITRIDE;

EID: 0038518461     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00979-7     Document Type: Conference Paper

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