Transparent conducting oxides at high aspect ratios by ALD

ECS Transactions

Volumn 3, Issue 15, 2006, Pages 243-247

  Pellin, M J ^a   Elam, J W ^a   Libera, J A ^a   Martinson, A B F ^a,b   Hupp, J T ^b  

^a ARGONNE NATIONAL LABORATORY   (United States)

^b NORTHWESTERN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; ATOMS; ENERGY GAP; TRANSPARENT CONDUCTING OXIDES; WIDE BAND GAP SEMICONDUCTORS;

DEPOSITION AREAS; DEPOSITION METHODS; ELECTRONIC MATERIALS; HIGH ASPECT RATIO; HIGH CARRIER MOBILITY; HIGH CONDUCTIVITY; LONG EXPOSURES; OXYGEN STOICHIOMETRY;

ATOMIC LAYER DEPOSITION;

EID: 45749149545     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2721493     Document Type: Conference Paper

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