Large area flexible electronics fabricated using self-aligned imprint lithography

ECS Transactions

Volumn 8, Issue 1, 2007, Pages 197-204

  Jackson, W B ^a   Almanza Workman, M ^a   Chaiken, A ^a   Garcia, R ^a   Jeans, A ^a   Kim, H J ^a   Kwon, O ^a   Luo, H ^a   Mei, P ^a   Perlov, C ^a   Taussig, C ^a   Shur, M S ^b   Koudymov, A ^b  

^a HEWLETT PACKARD LABORATORIES   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FLEXIBLE ELECTRONICS; NANOIMPRINT LITHOGRAPHY; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON COMPOUNDS; THIN FILM TRANSISTORS; THIN FILMS; TIN OXIDES; ULSI CIRCUITS;

ACTIVE MATRIX ARRAYS; CHANNEL LENGTH; COMPATIBLE PROCESS; ELECTRICAL CHARACTERISTIC; FLEXIBLE PLASTICS; IMPRINT LITHOGRAPHY; LAYER ALIGNMENT; ZINC-TIN-OXIDE (ZTO);

THIN FILM CIRCUITS;

EID: 45749121521     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2767308     Document Type: Conference Paper

References (10)

1. Chou SY, Krauss PR, Renstrom PJ, J. Vac. Sci. Tech. B 14, 4129 (1996).
2. Xia, Y. and Whitesides, G. M., (1998) Soft Lithography. In Annu. Rev. Mater. Sci. 28, 153-184.
3. Quake SR & Scherer A (2000). From micro- to nanofabrication with soft materials, Science, 290, 1536-1540.
4. Rogers, J. A. & Nuzzo, R. G. (2005, February). Recent progress in soft lithography. In Materials today, 8, 50 - 56.
5. Kim H-J, Almanza-Workman M, Chaiken A, Jackson WB, Jeans A, Kwon O, Luo H, Mei P, Perlov C, Taussig C, Jeffrey, F, Braymen S, Hauschildt J,(2006) Roll-to-roll fabrication of active-matrix backplanes using self-aligned imprint lithography (SAIL) 6th Int. Meeting Information Disply/5th Int. Display Manufacturing Conf. Daegu, Korea, 2006 Digest 1539-1543
6. Ping Me, Jackson W. B., Taussig C. P., Jeans A., Forming a Plurality of Thin-Film Devices, US Patent Application 2005/0176182 (2005).
7. Carcia PF, McLean RS, Reilly MH (2005). Oxide engineering of ZnO thin-film transistors for flexible electronics. Journal Soc. Info. Display 13/7: 547-550
8. Hoffman R, Norris B, and Wager J. (2003) ZnO-based transparent thin-film transistors. Appl. Phys. Lett., 82:733-735
9. Fortunato EC, Barquinha PM, Pimentel AC, Gonçalves AM, Marques AJ, Martins RF, and Pereira LM (2004). Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature. Appl. Phys. Lett. 85:2541-43.
10. Jackson WB, Hoffman RL and Herman GS (2005). High-performance flexible zinc tin oxide field-effect transistors. Appl. Phys. Lett. 87:193503-05.