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Volumn 11, Issue 5, 2007, Pages 97-101

Monolayer formation on GaN surface via self-assembly

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CONTACT ANGLE; ENERGY GAP; GALLIUM NITRIDE; III-V SEMICONDUCTORS; MONOLAYERS; SAPPHIRE; SELF ASSEMBLY; SEMICONDUCTOR DEVICES; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 45749110556     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2783862     Document Type: Conference Paper
Times cited : (3)

References (16)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.