Nanoscale lithography of silicon dioxide using electron beam patterned carboxylic acids as localized etch initiators

Journal of the Electrochemical Society

Volumn 144, Issue 2, 1997, Pages 605-616

  Whidden, T K ^a,b   Yang, S J ^a   Jenkins Gray, A ^a   Pan, M ^a,b   Kozicki, M N ^a,b  

^a ARIZONA STATE UNIVERSITY   (United States)

^b ELECTROCHEMICAL SOCIETY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBOXYLIC ACIDS; CROSSLINKING; ELECTRON BEAMS; ELLIPSOMETRY; ETCHING; INFRARED SPECTROSCOPY; INITIATORS (CHEMICAL); MONOLAYERS; RAMAN SPECTROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICA; THIN FILMS;

LOCALIZED ETCH INITIATORS; SPECTROSCOPIC ELLIPSOMETRY;

NANOTECHNOLOGY;

EID: 0031078317     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837455     Document Type: Article

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