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Volumn 7028, Issue , 2008, Pages
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Separable OPC models for computational lithography
a a a a a b b b a a a a a c c c b
b
ASML
(Netherlands)
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Author keywords
3D mask models; OPC; OPC model; Optical proximity correction; Separable models
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Indexed keywords
CADMIUM;
CADMIUM COMPOUNDS;
COMPUTER NETWORKS;
EXPOSURE METERS;
FINITE ELEMENT METHOD;
FORECASTING;
LITHOGRAPHY;
MANUFACTURE;
MATERIALS SCIENCE;
MATHEMATICAL MODELS;
OPTICS;
PHOTOMASKS;
PHOTONICS;
SEMICONDUCTING CADMIUM COMPOUNDS;
SPECIFICATIONS;
TECHNOLOGY;
TOOLS;
CALIBRATION ACCURACY;
CD UNIFORMITY (CDU);
EXPERIMENTAL DATA;
EXPOSURE MODELING;
EXPOSURE TOOLS;
ILLUMINATION SOURCES;
IMAGING TOOLS;
IN ORDER;
LUMPED MODELING;
MASK TECHNOLOGY;
MULTIPLE SETS;
NEXT-GENERATION LITHOGRAPHY (NGL);
OPC MODELING;
OPTICAL (PET) (OPET);
PHOTO MASKING;
PREDICTION ACCURACY;
PROCESS WINDOWS;
RESIST MODELS;
SEMICONDUCTOR MANUFACTURING;
WAFER PRINTING;
THREE DIMENSIONAL;
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EID: 45549104490
PISSN: 0277786X
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1117/12.793039 Document Type: Conference Paper |
Times cited : (7)
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References (7)
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