Dual-band MW/LW IRFPAs made from HgCdTe grown by MOVPE

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6940, Issue , 2008, Pages

  Price, J P G ^a   Jones, C L ^a   Hipwood, L G ^a   Shaw, C J ^a   Abbott, P ^a   Maxey, C D ^a   Lau, H W ^a   Fitzmaurice, J ^a   Catchpole, R A ^a   Ordish, M ^a   Thorne, P ^a   Weller, H J ^a   Mistry, R C ^a   Hoade, K ^a   Bradford, A ^a   Owton, D ^a   Knowles, P ^a  

^a BAE SYSTEMS Infra Red Ltd   (United Kingdom)

Author keywords

Dual band; FPA; MCT; MOVPE; Multi colour infrared; MW LW; Spectrally agile

Indexed keywords

ARCHITECTURAL DESIGN; COMPUTER NETWORKS; CRYSTAL GROWTH; DEFECTS; DETECTORS; ELECTRONICS INDUSTRY; ENERGY STORAGE; EPITAXIAL GROWTH; FOCUSING; INFRARED RADIATION; INTEGRATED CIRCUITS; MERCURY COMPOUNDS; METAL CLADDING; MICROELECTRONICS; MOLECULAR BEAM EPITAXY; MULTITASKING; NETWORKS (CIRCUITS); ORGANOMETALLICS; PIXELS; SILICON; SILICON DETECTORS; TECHNOLOGY; WAVES;

(100) SILICON; APPLIED BIAS; BUMP-BONDED; CUT OFF WAVELENGTHS; DEFECT LEVEL (DL); DIODE ARRAYS; DUAL BANDS; FOCAL PLANES; INFRARED (IR); INFRARED TECHNOLOGIES; METAL ORGANIC (MO); QUASI SIMULTANEOUS; READ OUT INTEGRATED CIRCUIT (ROIC); VAPOUR PHASE EPITAXY;

IMAGING TECHNIQUES;

EID: 45549094346     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.784483     Document Type: Conference Paper

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