Ultimate limits for the radiation hardness of silicon strip detectors for sLHC

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 581, Issue 1-2 SPEC. ISS., 2007, Pages 365-367

  Lozano, M ^a   Campabadal, F ^a   Garcia C ^b   Gonzalez Sevilla, S ^b   Lacasta, C ^b   Lacuesta, V ^b   Marti S ^b   Minano M ^b   Pellegrini, G ^a   Ullan M ^a   Rafi J M ^a  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^b INSTITUTO DE FÍSICA CORPUSCULAR IFIC   (Spain)

Author keywords

Microstrip; p type; Radiation hardness; Silicon detectors; SLHC

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRONS; INFRARED RADIATION; IRRADIATION; NEUTRONS; RADIATION HARDENING; READOUT SYSTEMS; STRONTIUM;

FLOAT ZONE SILICON; MICROSTRIP DETECTORS; RADIATION FLUENCE;

SILICON DETECTORS;

EID: 35348848425     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2007.08.006     Document Type: Article

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