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Journal of Crystal Growth

Volumn 207, Issue 1, 1999, Pages 15-19

Thermodynamic analysis of growth rate reduction by VCl4 during metalorganic vapor-phase epitaxy of GaAs

(4) Bchetnia, A a Rebey, A a Boufaden, T a El Jani, B a

a FACULTÉ DES SCIENCES DE MONASTIR (Tunisia)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; GIBBS FREE ENERGY; LASER APPLICATIONS; LIGHT REFLECTION; METALLORGANIC VAPOR PHASE EPITAXY; REFLECTOMETERS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; VANADIUM COMPOUNDS;

LASER REFLECTOMETRY; VANADIUM TETRACHLORIDE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033328953 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(99)00349-8 Document Type: Article

Times cited : (8)

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