A Ka/Q-band 2 watt MMIC power amplifier using dual recess 0.15 μm PHEMT process

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 2004, Pages 1669-1672

  Chen, Shuoqi ^a   Nayak, Sabyasachi ^a   Kao, Ming Yih ^a   Delaney, Joseph ^a  

^a TRIQUINT SEMICONDUCTOR   (United States)

Author keywords

GaAs; Ka band; Millimeter wave; MMIC; PHEMT; Power amplifier; Q band

Indexed keywords

FIELD EFFECT TRANSISTORS; MILLIMETER WAVES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; OPTIMIZATION; RADIO; SATELLITE COMMUNICATION SYSTEMS; SEMICONDUCTING GALLIUM ARSENIDE; WIRELESS TELECOMMUNICATION SYSTEMS;

HIGH POWER AMPLIFIERS (HPA); KA-BAND; PHEMT; Q-BAND;

POWER AMPLIFIERS;

EID: 4544349750     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

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