1-Watt broad Ka-band ultra small high power amplifier MMICs using 0.25-μm GaAs PHEMTs

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 2002, Pages 40-43

  Bessemoulin, Alexandre ^a   Dishong, J ^b   Clark, G ^b   White, D ^b   Quentin, P ^a   Thomas, H ^a   Geiger, D ^a  

^a United Monolithic Semiconductors GmbH   (Germany)

^b Nanowave Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GAIN MEASUREMENT; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; SILICON WAFERS;

HIGH POWER AMPLIFIERS (HPA);

POWER AMPLIFIERS;

EID: 0036438834     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. J.J. Komiak, W. Kong, P.C. Chao, and K. Nichols, "3 Watt Ka-band MMIC HPA and Driver Amplifier Implemented in a Fully Selective 0.15 μm Power PHEMT process," in IEEE MTT-S Int. Microwave Symp. Dig., 1998, pp. 45-48.
2. M.K. Siddiqui et al., "A High Power Broadband and High Efficiency Monolithic Power Amplifier at 28 GHz for LMDS Applications," in IEEE Trans. on MTT, vol. 46, pp. 2226-2232, Dec. 1998.
3. nd 2000 IEEE GaAs IC Symp. Dig., pp. 223-226.
4. A. Bessemoulin et al., "Ka-Band High Power and Driver MMIC Amplifiers using GaAs PHEMTs and Coplanar Waveguides," in IEEE Microwave and Guided Wave Letters, Vol. 10, No 11, Dec., pp. 534-536, 2000.
5. th 1993 IEEE GaAs IC Symp. Dig, pp. 251-254.