Charge writing in silicon-silicon dioxide for nano-assembly

Nanotechnology

Volumn 15, Issue 9, 2004, Pages 1211-1216

  Enikov, Eniko T ^a   Palaria, Amritanshu ^a  

^a University of Arizona   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTRIC CHARGE; HYDROPHOBICITY; MATHEMATICAL MODELS; NANOTECHNOLOGY; OXIDATION; THICKNESS MEASUREMENT;

CHARGE TRAPPING; KELVIN PROBE FORCE MICROSCOPY (KFM); NANO-ASSEMBLY;

SILICA;

EID: 4544342713     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/15/9/017     Document Type: Article

References (18)

1. Wright W M D and Chetwynd D G 1998 Nanotechnology 9 133
2. Barrett R C and Quate C F 1991 J. Appl. Phys. 70 2725
3. Kang C J, Buh G H, Lee S, Kim C K, Mang K M, Im C and Kuk Y 1999 Appl. Phys. Lett. 74 1815
4. Jacobs H O and Stemmer A 1999 Surf. Interface Anal. 27 361
5. Krinke T J, Fissan H, Deppert K, Magnusson M H and Samuelson L 2001 Appl. Phys. Lett. 78 3708
6. Krinke T J, Deppert K, Magnusson M H and Fissan H 2002 Part. Part. Syst. Charact. 19 321
7. Fudouzi H, Kobayashi M and Shinya N 2002 Adv. Mater. 14 1649
8. Barry C R, Lwin N Z, Zheng W and Jacobs H O 2003 Appl. Phys. Lett. 83 5527
9. Barry C R, Steward M G, Lwin N Z and Jacobs H O 2003 Nanotechnology 14 1057
10. Olthuis W and Bergveld P 1992 IEEE Trans. Electr. Insul. 27 691
11. Morita S, Sugawara Y and Fukano Y 1993 Japan. J. Appl. Phys. 32 2983
12. Fukano Y, Hontani K, Uchihashi T, Okusako T, Chayahara A, Sugawara Y, Yamanishi Y, Oasa T and Morita S 1994 Japan. J. Appl. Phys. 33 3756
13. Schuegraf K F and Hu C 1994 IEEE Trans. Electron Devices 41 761
14. Muller R S and Kamins T I 1986 Device Electronics for Integrated Circuits (New York: Wiley)
15. Raju G G 2003 Dielectrics in Electric Fields (New York: Dekker)
16. Nicollian E H and Brews J R 2003 MOS (Metal Oxide Semiconductor) Physics and Technology (New York: Wiley)
17. Nicollian E H, Berglund C N, Schmidt P F and Andrews J M 1971 J. Appl. Phys. 42 5654
18. Lenahan P M and Conley J F Jr 1998 J. Vac. Sci. Technol. B 16 2134