Low-power high-speed operation of submicron InP-InGaAs SHBTs at 1 mA

IEEE Electron Device Letters

Volumn 24, Issue 7, 2003, Pages 427-429

  Hafez, Walid ^a   Lai, Jie Wei ^a   Feng, Milton ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

Heterojunction bipolar transistors (HBTs)

Indexed keywords

CURRENT DENSITY; ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; MIXER CIRCUITS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON COMPOUNDS;

EMITTER; LOW-POWER HIGH-SPEED APPLICATIONS; SUBMICRON HETEROJUNCTION BIPOLAR TRANSISTORS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0042388036     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.814008     Document Type: Letter

References (7)

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