Room temperature 1.55 μm emission from InAs quantum dots grown on (0 0 1)InP substrate by molecular beam epitaxy

Journal of Crystal Growth

Volumn 218, Issue 2, 2000, Pages 451-454

  Li, Y F ^a   Ye, X L ^a   Xu, B ^a   Liu, F Q ^a   Ding, D ^a   Jiang, W H ^a   Sun, Z Z ^a   Zhang, Y C ^a   Liu, H Y ^a   Wang, Z G ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; MORPHOLOGY; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

LATTICE MATCHED LAYERS; SELF-ASSEMBLED NANOSTRUCTURES;

MOLECULAR BEAM EPITAXY;

EID: 18544402912     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00561-3     Document Type: Article

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