Structural and optical characterization of InAs nanostructures grown on (001) and high index InP substrates

Applied Surface Science

Volumn 167, Issue 3, 2000, Pages 191-196

  Li, Y F ^a   Ye, X L ^a   Liu, F Q ^a   Xu, B ^a   Ding, D ^a   Jiang, W H ^a   Sun, Z Z ^a   Liu, H Y ^a   Zhang, Y C ^a   Wang, Z G ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL LATTICES; CRYSTAL ORIENTATION; EMISSION SPECTROSCOPY; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SURFACE STRUCTURE;

INDIUM ARSENIDE; LATTICE MATCHING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0034300667     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00516-X     Document Type: Article

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