Optical and structural properties of InP nanowires grown under vapor-liquid-solid mechanism by metal organic vapor phase epitaxy

Proceedings of the IEEE Conference on Nanotechnology

Volumn 1, Issue , 2003, Pages 136-139

  Bhunia, S ^a   Kawamura, T ^a   Watanabe, Y ^a   Fujikawa, S ^b   Tokushima, K ^b  

^a NTT CORPORATION   (Japan)

^b UNIVERSITY OF HYOGO   (Japan)

Author keywords

Dispersion; Electron optics; Epitaxial growth; Gold; Indium phosphide; Mechanical factors; Nanoparticles; Nanowires; Scanning electron microscopy; Transmission electron microscopy

Indexed keywords

CATALYSTS; DISPERSION (WAVES); ELECTRON MICROSCOPY; ELECTRON OPTICS; ELECTRONS; ENERGY DISPERSIVE X RAY ANALYSIS; EPITAXIAL GROWTH; GOLD; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INDIUM PHOSPHIDE; NANOPARTICLES; NANOTECHNOLOGY; NANOWIRES; OPTICAL PROPERTIES; ORGANOMETALLICS; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY; X RAY ANALYSIS;

ELECTROOPTIC DEVICES; MECHANICAL FACTORS; METAL ORGANIC VAPOR PHASE EPITAXIAL GROWTH; METAL-ORGANIC VAPOR PHASE EPITAXY; ROOM TEMPERATURE PHOTOLUMINESCENCE SPECTRA; STRUCTURAL AND OPTICAL PROPERTIES; VAPOR-LIQUID-SOLID MECHANISM; WAFER SCALE FABRICATION;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 4544260073     PISSN: 19449399     EISSN: 19449380     Source Type: Conference Proceeding    
DOI: 10.1109/NANO.2003.1231734     Document Type: Conference Paper

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