Reliability phenomena under AC stress

Microelectronics Reliability

Volumn 38, Issue 1, 1998, Pages 1-5

  Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTROMIGRATION; RELIABILITY;

GATE OXIDE BREAKDOWN; HOT-ELECTRON EFFECTS;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0031643887     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(97)00163-7     Document Type: Article

References (14)

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3. Quader, K., Ko, P. and Hu, C., Projecting CMOS circuit hot-carrier reliability from DC device lifetime. In Int. Electron Device Meeting, 1993, pp. 511-514.
4. Quader, K., Fang, P., Yue, J., Ko, P. and Hu, C. Hot-carrier design rules for translating device degradation to CMOS digital circuit degradation. IEEE Trans. Electron Dev., 1994, May, 681-691.
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6. Chen, J. F. et al., Statistical variation of NMOSFET hot-carrier lifetime and its impact on digital circuit reliability. In Int. Electron Devices Meeting Technical Digest, 1995, pp. 29-32.
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11. Tao, J. et al. Electromigration characteristics of TiN barrier layer material. IEEE Electron Dev. Lett., 1995, June, 230-232.
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