Hot carrier-induced SOI MOSFET degradation under ac stress conditions

IEEE Electron Device Letters

Volumn 23, Issue 3, 2002, Pages 157-159

  Lee, Jae Ki ^b   Choi, Nag Jong ^b   Hyun, Yun Bong ^b   Yu, Chong Gun ^a,b   Colinge, Jean Pierre ^a,c   Park, Jong Tae ^a,b  

^a IEEE

^b SolarLight Ltd   (South Korea)

^c Davis   (United States)

Author keywords

Hot carriers; Insulated gate FETs; MOS devices; Semiconductor device reliability; Silicon on insulator (SOI) technology

Indexed keywords

COMPUTER SIMULATION; DEGRADATION; ELECTRIC FIELD EFFECTS; HOT CARRIERS; IMPACT IONIZATION; INSULATED GATE BIPOLAR TRANSISTORS; SILICON ON INSULATOR TECHNOLOGY; STRESS ANALYSIS; THRESHOLD VOLTAGE;

SEMICONDUCTOR DEVICE RELIABILITY;

MOSFET DEVICES;

EID: 0036504082     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.988823     Document Type: Article

References (12)

1. Dynamic floating-body instability in partially depleted SOI CMOS circuits
2. Numerical analysis of switching characteristics in SOI MOSFET's
3. Analysis of floating body induced transient behaviors in partially depleted thin film SOI devices
4. Average transient current in SOI MOSFETs: A new technique for measuring the transient floating body effects
5. Hot carrier effects and reliable lifetime prediction in deep submicron N- and P-channel SOI MOSFETs
6. New hot-carrier degradation mode in thin-film SOI nMOSFET's
7. A unified understanding on fully depleted SOI nMOSFET hot carrier-degradation
8. AC hot-carrier effects in scaled MOS devices
9. The role of electron trap creation in enhanced hot-carrier degradation during ac stress
10. Projecting CMOS circuit hot-carrier reliability from dc device lifetime
11. Time dependence power law of hot carrier degradation in SOI MOSFET's
12. Characteristics of SOIFET's under pulsed conditions