AVD and MOCVD TaCN-based films for gate metal applications on high k gate dielectrics

ECS Transactions

Volumn 11, Issue 4, 2007, Pages 557-567

  Karim, Zia ^a   Barbar, Ghassan ^b   Boissière, Olivier ^b   Lehnen, Peer ^b   Lohe, Christoph ^b   Seidel, Tom ^a   Adelmann, Christoph ^c,d   Conard, Thierry ^c,d   O'Sullivan, Barry ^c,d   Ragnarsson, Lars Ake ^c,d   Schram, Tom ^c,d   Van Elshocht, Sven ^c,d   De Gendt, Stefan ^c,d  

^a Aixtron Inc ^*  (Germany)

^b AIXTRON AG   (Germany)

^c IMEC   (Belgium)

^d UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

GATE DIELECTRICS; HAFNIUM COMPOUNDS; HIGH-K DIELECTRIC; LOGIC GATES; OXIDE FILMS; SILICON; SILICON COMPOUNDS; VAPOR DEPOSITION; WORK FUNCTION;

ATOMIC VAPOR DEPOSITION; DEPOSITION TECHNOLOGY; FILM COMPOSITION; FLAT-BAND VOLTAGE; HIGH WORK FUNCTION; HIGH- K GATE DIELECTRICS; OXIDE THICKNESS; PHYSICAL AND CHEMICAL CHARACTERISTICS;

DIELECTRIC MATERIALS;

EID: 45249118467     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2779590     Document Type: Conference Paper

References (11)

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