High dopant activation and low damage P+ USJ formation

AIP Conference Proceedings

Volumn 866, Issue , 2006, Pages 96-100

  Borland, John ^a   Shishiguchi, Seiichi ^b   Mineji, Akira ^b   Krull, Wade ^c   Jacobson, Dale ^c   Tanjyo, Masayasu ^d   Lerch, Wilfried ^e   Paul, Silke ^e   Gelpey, Jeff ^e   McCoy, Steve ^e   Venturini, Julien ^f   Current, Michael ^g   Faifer, Vladimir ^g   Hillard, Robert ^h   Benjamin, Mark ^h   Walker, Tom ⁱ   Buczkowski, Andrzej ⁱ   Li, Zhiqiang ⁱ   Chen, James ^j  

^a JOB Technologies   (United States)

^b RENESAS TECHNOLOGY CORP   (Japan)

^c Ceradyne Inc   (United States)

^d NISSIN ION EQUIPMENT CO LTD   (Japan)

^e MATTSON THERMAL PRODUCTS GMBH   (United States)

^f SOPRA   (France)

^g Frontier Semiconductor   (United States)

^h Solid State Measurements   (United States)

ⁱ Accent Optical Technologies   (United States)

^j Four Dimensions Inc   (United States)

more..

Author keywords

Boron; Deoaborane; Flash annealing; Laser annealing; Oota deoaborane; SPE annealing; Ultra shallow junction; USJ metrology

Indexed keywords

EID: 33846991286     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.2401470     Document Type: Conference Paper

References (5)

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2. R. Surdeanu, R. Lindsay, S. Severi, A. Satta, B. Pawlak, A. Lauwers, C. Dachs, K. Henson, S. McCoy, J. Gelpey and X. Pages, SSDM 2004, section B-3-1, p. 180.
3. J. Borland, M. Tanjo, N. Nagai, T. Aoyama and D. Jacobson, Semiconductor International, Jan. 2005, p. 52.
4. T. Aoyama, M. Fukuda, Y. Nara, S. Umisedo, N. Hamamoto, M. Tanjo and T. Nagayama, IWJT 2005, June 2005, section S2-2, p. 27.
5. J. Borland, T. Matsuda and K. Sakamoto, Solid State Technology, June 2002, p. 83.