Key improvement schemes of accuracies in EB mask writing for double patterning lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6792, Issue , 2008, Pages

  Sunaoshi, Hitoshi ^a   Kamikubo, Takashi ^a   Nishimura, Rieko ^a   Tsuruta, Kaoru ^a   Katsumata, Takehiko ^a   Ohnishi, Takayuki ^a   Anze, Hirohito ^a   Takamatsu, Jun ^a   Yoshitake, Shusuke ^a   Tamamushi, Shuichi ^a  

^a NUFLARE TECHNOLOGY INC   (Japan)

Author keywords

Double patterning; Electron beam mask writer; Image placement accuracy; Resist blur; Resist charging

Indexed keywords

CADMIUM; CADMIUM COMPOUNDS; COMPUTER NETWORKS; CRACK DETECTION; DATA STORAGE EQUIPMENT; DECISION MAKING; ELECTRON BEAM LITHOGRAPHY; MASKS; PHOTOACOUSTIC EFFECT; PLANNING; RESOURCE ALLOCATION; SEMICONDUCTOR DOPING; SENSITIVITY ANALYSIS; TECHNOLOGY;

(OTDR) TECHNOLOGY; ACID DIFFUSION LENGTH; CD UNIFORMITY (CDU); CHARGE DISSIPATION; CHARGING EFFECTS; CRITICAL DIMENSION (CD); DOMINANT FACTORS; DOUBLE PATTERNING; ERROR SOURCES; EUROPEAN; FEASIBILITY STUDIES; HIGH DOSE; HIGH SENSITIVITY (HS); IMAGE-PLACEMENT (IP); IN-SITU; MASK MANUFACTURING; MASK WRITING; MEASUREMENT METHODS; OPTICAL LITHOGRAPHY; PATTERN FIDELITY; PATTERN RESOLUTION; SINGLE EXPOSURE; TIME-DEPENDENT;

PHOTORESISTS;

EID: 44949201496     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.798521     Document Type: Conference Paper

References (8)

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