Improved compact model for symmetric doped double-gate MOSFETs

ECS Transactions

Volumn 9, Issue 1, 2007, Pages 47-56

  Cerdeira, A ^a   Iniguez B ^b   Estrada, M ^a  

^a DEPARTAMENTO DE FÍSICA   (Mexico)

^b UNIVERSITAT ROVIRA I VIRGILI   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

(R ,S)-SYMMETRIC; ANALYTICAL MODELLING; COMPACT MODELING; DOPED SILICON; DOUBLE-GATE MOSFETS (DG-MOSFET); MICROELECTRONICS TECHNOLOGY; SHORT CHANNELS; WIDE-RANGE;

COMPUTER NETWORKS; ELECTRONICS INDUSTRY; FIELD EFFECT TRANSISTORS; MICROELECTRONICS; NEODYMIUM; POWDERS; SILICON; TECHNOLOGY;

MOSFET DEVICES;

EID: 44749092425     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2766873     Document Type: Conference Paper

References (8)

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