Effect of Ba substitution on the microstructure and electrical conductivity of BaxSr1-xRuO3 thin films prepared by laser ablation

Journal of the Ceramic Society of Japan

Volumn 116, Issue 1351, 2008, Pages 441-444

  Ito, Akihiko ^a   Masumoto, Hiroshi ^b   Goto, Takashi ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

Barium ruthenate; Electricalconductivity; Laser ablation; Microstiucture; Strontium ruthenate; Substitution effect; Thin films

Indexed keywords

ABLATION; ELECTRIC CONDUCTIVITY; FILM PREPARATION; LASER ABLATION; MICROSTRUCTURE; RUTHENIUM ALLOYS; SUBSTRATES;

ELECTRICALCONDUCTIVITY; MICROSTIUCTURE; RUTHENATES; STRONTIUM RUTHENATES; SUBSTITUTION EFFECT;

THIN FILMS;

EID: 44649136669     PISSN: 18820743     EISSN: 13486535     Source Type: Journal    
DOI: 10.2109/jcersj2.116.441     Document Type: Article

References (19)

1. K. Char, M. S. Colclough, T. H. Geballe and K. E. Myers, Appl. Phys. Lett., 62, 196-198 (1993).
2. P. B. Allen, H. Berger, O. Chauvet, L. Forro, T. Jarlborg, A. Junod, B. Revaz and G. Santi, Phys. Rev. B, 53, 4393-4398 (1996).
3. T. Morimoto, O. Hidaka, K. Yamakawa, O. Arisumi, H. Kanaya, T. Iwamoto, Y. Kumura, I. Kunishima and S. Tanaka, Jpn. J. Appl. Phys., 39, 2110-2213 (2000).
4. C. B. Eom, R. B. Van Dover, J. M. Phillips, D. J. Werder, J. H. Marshall, C. H. Chen, R. J. Cavaand R. M. Flemingand and D. K. Fork, Appl. Phys. Lett., 63, 2570-2572 (1993).
5. Y. Kumura, T. Ozaki, H. Kanaya, O. Hidaka, Y. Shimojo, S. Shuto, Y. Yamada, K. Tomioka, K. Yamakawa, S. Yamazaki, D. Takashima, T. Miyakawa, S. Shiratake, S. Ohtsuki, I. Kunishima and A. Nitayama, Solid-State Electro., 50, 606-612 (2006).
6. P. C. Donohue, L. Katz and R. Ward, Inorg. Chem., 4, 306-310 (1965).
7. J. J. Randall and R. Ward, J.Am. Chem. Soc., 81, 2629-2631 (1959).
8. S.-T. Hong and A. W. Sleight, J. Solid State. Chem., 128, 251-255 (1997).
9. J. M. Longo and J. A. Kafalas, Mater. Res. Bull., 3, 687-692 (1968).
10. P. C. Donohue, L. Katz and R. Ward, Inorg. Chem., 5, 335-338 (1966).
11. H. -C. Kim, Y. -S. Kim, Y. -B. Kim and D. -K. Choi, J. Non-Cryst. Solids., 336, 107-112 (2004).
12. N. Fukushima, K. Sano, T. Schimizu, K. Abe and S. Komatsu, Appl. Phys. Lett., 73, 1200-1202 (1998).
13. A. Ito, H. Masumoto and T. Goto, Mater. Trans., 47, 2808-2814 (2007).
14. A. Ito, H. Masumoto and T. Goto, Mater. Trans., 48, 2953-2959, (2007).
15. K. Takahashi, T. Oikawa, K. Saito, S. Kaneko, H. Fujisawa, M. Shimizu and H. Funakubo, Jpn. J. Appl. Phys., 41, 5376-5380 (2002).
16. Y. Z. Yoo, O. Chmaissem, S. Kolesnik, B. Dabrowski, M. Maxwell and C. W. Kimball, L. McAnelly, M. H.-Sheikh and A. P. Genis, J. Appl. Phys., 97, 103525 (2005).
17. S. H. Oh and C.-G. Park, J. Korean Phys. Soc., 37, 961-965 (2000).
18. M. Hiratani, C. Okazaki, K. Imagawa and K. Takagi, Jpn. J. Appl. Phys., 35, 6212-6216 (1996).
19. D. J. Singh, J. Appl. Phys., 79, 4818-4820 (1996).