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Volumn 17, Issue 4, 1999, Pages 1182-1190

Comparison of morphology and interfacial composition of Pd ultrathin films on 6H-SiC and 4H-SiC at different annealing temperatures

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[No Author keywords available]

Indexed keywords


EID: 0012704652     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581792     Document Type: Article
Times cited : (15)

References (28)
  • 1
    • 77956678388 scopus 로고    scopus 로고
    • edited by Y. S. Park (Academic, San Diego, CA) Chap. 3
    • V. Saxena, and A. J. Steckl, Semiconductors and Semimetals, edited by Y. S. Park (Academic, San Diego, CA, 1998), Vol. 52, Chap. 3, p. 77.
    • (1998) Semiconductors and Semimetals , vol.52 , pp. 77
    • Saxena, V.1    Steckl, A.J.2
  • 12
    • 85034561924 scopus 로고    scopus 로고
    • Wide-Bandgap Semiconductors for High Power, High Frequency and High Temperature
    • edited by S. DenBaars et al.
    • W. J. Lu, D. T. Shi, W. E. Collins, H. Chen, and A. Burger, Wide-Bandgap Semiconductors for High Power, High Frequency and High Temperature, edited by S. DenBaars et al. [Mater. Res. Soc. Symp. Proc. 512, 339 (1998)].
    • (1998) Mater. Res. Soc. Symp. Proc. , vol.512 , pp. 339
    • Lu, W.J.1    Shi, D.T.2    Collins, W.E.3    Chen, H.4    Burger, A.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.