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Volumn 1, Issue , 2004, Pages 31-34

Enhanced prediction of pHEMT nonlinear distortion using a novel charge conservative model

Author keywords

Capacitance; HEMT; Intermodulation distortion; Nonlinear modeling; Power amplifier

Indexed keywords

DISTORTION; INTERMODULATION DISTORTION; NONLINEAR MODELING; TRANSCAPACITANCE;

EID: 4444331452     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (19)

References (12)
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  • 2
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  • 3
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    • V. I. Cojocaru and T. J. Brazil, "A scalable general-purpose model for microwave FET's including the DC/AC dispersion effects," IEEE Trans. Microwave Theory Tech., vol. 45, no. 12, pp.2248-2255, Dec. 1997.
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  • 4
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    • Parker, A.1    Skellern, D.2
  • 6
    • 0029404050 scopus 로고
    • Charge conservation and the transcapacitance element: An exposition
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    • A. Snider, "Charge conservation and the transcapacitance element: An exposition," IEEE Tran. Educ., vol. 38, no. 4, pp-376-379, Nov. 1995.
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    • J. Wood and D. E. Root, "Bias-dependent linear, scalable millimeter-wave FET model," IEEE Trans. Microwave Theory & Tech., vol. 48, no. 12, pp.2352-2360, Dec. 2000.
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  • 8
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    • M. Wren and T. J. Brazil, "The effect of the gate Schottky diode on pHEMT power amplifier performance," IEEE High Frequency Postgraduate Student Colloquium, Belfast, pp.52-55, Sept. 2003.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.