The effect of the gate Schottky diode on pHEMT power amplifier performance

IEEE High Frequency Postgraduate Student Colloquium

Volumn 2003-January, Issue , 2003, Pages 52-55

  Wren, M ^a   Brazil, T J ^a  

^a UNIVERSITY COLLEGE DUBLIN   (Ireland)

Author keywords

Gain measurement; Linearity; Packaging; PHEMTs; Power amplifiers; Power generation; Power measurement; Power system modeling; Predictive models; Schottky diodes

Indexed keywords

AMPLIFIERS (ELECTRONIC); DIODES; ELECTRIC POWER MEASUREMENT; GAIN MEASUREMENT; PACKAGING; POWER GENERATION; SCHOTTKY BARRIER DIODES;

LINEARITY; PHEMTS; POWER SYSTEM MODEL; PREDICTIVE MODELS; SCHOTTKY DIODES;

POWER AMPLIFIERS;

EID: 4444253939     PISSN: 15466523     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/HFPSC.2003.1242305     Document Type: Conference Paper

References (5)

1. W. Bösch, "Recent advances of high efficiency power pHEMT devices", IEEE MTT-S Symp. Workshop on Next Generation Transmitter Architecture and Design, June 2003.
2. W. R. Curtice and M. Ettenberg, "A nonlinear GaAsFET model for use in the design of output circuits for power amplifiers," IEEE Trans. Microwave Theory Tech., Vol. 33, pp. 1383-1394, Dec. 1985.
3. V. I. Cojocaru and T.J. Brazil, "A scalable general-purpose model for microwave FET's including the DC/AC dispersion effects", IEEE Trans. Microwave Theory Tech., Vol. 45, No. 12, Dec. 1997.
4. S.A. Maas, Nonlinear microwave circuits. Norwood, MA:Artech House, 2003.
5. C. Florian, F. Filicori, D. Mirri, T. J. Brazil and M. Wren, "CAD identification and validation of a non-linear dynamic model for performance analysis of large-signal amplifiers," IEEE MTT-S Int. Microwave Symp. Digest, pp. 2125-2128, June 2003.