Highly sensitive Al0.25Ga0.75As/In0.25Ga0.75As/GaAs quantum-well Hall devices with Si-delta-doped GaAs layer grown by LP-MOCVD

Sensors and Actuators, A: Physical

Volumn 57, Issue 3, 1996, Pages 183-185

  Lee, Jeong Soo ^a   Ahn, Kwang Ho ^a   Jeong, Yoon Ha ^a   Kim, Dae M ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

Low pressure metal organic chemical vapour deposition (LP MOCVD); Quantum well Hall devices; Si delta doping

Indexed keywords

CARRIER CONCENTRATION; ELECTRONS; MAGNETIC FIELDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; SIGNAL TO NOISE RATIO; TEMPERATURE DISTRIBUTION;

ALUMINUM GALLIUM ARSENIDE; ELECTRON MOBILITY; INDIUM GALLIUM ARSENIDE; LOW PRESSURE METALLORGANIC CHEMICAL VAPOR DEPOSITION; PSEUDOMORPHIC STRUCTURE; QUANTUM WELL HALL DEVICES;

SEMICONDUCTOR DEVICES;

EID: 0030374316     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(97)80112-4     Document Type: Article

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