Low-frequency magnetic and resistance noise in magnetoresistive tunnel junctions

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5469, Issue , 2004, Pages 13-27

  Jiang, L ^a   Skovholt, J F ^a   Nowak, E R ^a   Slaughter, J M ^b  

^a UNIVERSITY OF DELAWARE   (United States)

^b MOTOROLA INC   (United States)

Author keywords

1 f noise; Charge trapping; Magnetoresistance; Shot noise; Spin polarized tunneling; Tunnel junction

Indexed keywords

CHARGE TRAPPING; FERROMAGNETIC LAYERS; METALLIC MULTILAYERS; SPIN-POLARIZED TUNNELING;

MAGNETIC FIELDS; MAGNETIC FILMS; MAGNETIC HYSTERESIS; MAGNETORESISTANCE; NANOTECHNOLOGY; NATURAL FREQUENCIES; SEMICONDUCTOR MATERIALS; TUNNEL JUNCTIONS;

SHOT NOISE;

EID: 4444319427     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.544659     Document Type: Conference Paper

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