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Journal of Applied Physics

Volumn 91, Issue 10 I, 2002, Pages 8804-8806

Magnetic field dependent noise in magnetic tunnel junction

(6) Kim, K S a Shim, H J a Hwang, I J a Cho, B K a Seok, J H b Kim, Jin Tae c

a Gwangju Institute of Science and Technology (GIST) (South Korea)

b Samsung Advanced Institute of Technology (SAIT) (South Korea)

c Korea Research Institute of Standards and Science (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED MAGNETIC FIELDS; DOMAIN WALL MOTION; JUNCTION AREA; MAGNETIC STATE; MAGNETIC TUNNEL JUNCTION; MAGNETORESISTANCE RATIO; NOISE LEVELS; NOISE POWER; NOISE POWER SPECTRAL DENSITY; ROOM TEMPERATURE; SHARP INCREASE; STRONG FIELD; THERMAL-ANNEALING; THERMALLY ACTIVATED; TRANSITION REGIONS; VOLTAGE FLUCTUATIONS;

MAGNETIC FIELDS; PHOTOLITHOGRAPHY; POWER SPECTRAL DENSITY;

MAGNETIC DEVICES;

EID: 0037094539 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1447211 Document Type: Article

Times cited : (9)

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