High-frequency characterization and modeling of distortion behavior of MOSFETs for RF IC design

IEEE Journal of Solid-State Circuits

Volumn 39, Issue 9, 2004, Pages 1407-1414

  Lee, Tzung Yin ^a   Cheng, Yuhua ^a  

^a SKYWORKS SOLUTIONS INC   (United States)

Author keywords

MOSFET distortion; MOSFET modeling; RF circuit design; RF modeling

Indexed keywords

BIPOLAR JUNCTION TRANSISTORS (BJT); MOSFET DISTORTION; MOSFET MODELING; RF CIRCUIT DESIGN;

BIPOLAR TRANSISTORS; CARRIER MOBILITY; COMPUTER SIMULATION; INTEGRATED CIRCUIT LAYOUT; SECOND HARMONIC GENERATION; SEMICONDUCTOR JUNCTIONS; SIGNAL DISTORTION;

MOSFET DEVICES;

EID: 4444312778     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2004.829376     Document Type: Conference Paper

References (17)

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