Accurate MOS transistor modeling and parameter extraction valid up to 10 GHz

European Solid-State Device Research Conference

Volumn , Issue , 1998, Pages 484-487

  Jen, Steve H ^a,c   Enz, Christian ^b   Pehlke, David R ^a   Schroter, Michael ^b   Sheu, Bing J ^c  

^a ROCKWELL SCIENCE CENTER   (United States)

^b Rockwell Semiconductor Systems ^*  (United States)

^c University of Southern California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EQUIVALENT CIRCUITS; FIELD EFFECT TRANSISTORS; PARAMETER EXTRACTION;

ACCURATE MODELING; DIRECT EXTRACTION; EXTRINSIC COMPONENTS; HIGH FREQUENCY OPERATION; PARAMETER ANALYSIS; SATURATION REGION; SMALL SIGNAL EQUIVALENT CIRCUIT; SUBSTRATE COUPLINGS;

EXTRACTION;

EID: 84908150357     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. A. Abidi, A. Rofougaran, G. Chang, J. Rael, "The future of CMOS wireless transceivers, " IEEE ISSCC Digest, pp. 118-119, Feb., 1997.
2. D. Lovelace, J. Costa, N. Camilleri, "Extracting small-signal model parameters of silicon MOSFET transistors, " IEEE MTT-S Digest, pp. 865-868, Apr., 1994.
3. W. Liu, et al. "R. F. MOSFET modeling accounting for distributed substrate and channel resistances with emphasis on the BSIM3v3 SPICE model, " IEEE IEDM Digest, pp. 309-312, Dec. 1997.
4. Y. Tsividis, Operation and Modeling of The MOS Transistor, McGraw-Hill, New York, NY, 1987.
5. M. Koolen, J. Geelen, M. Versleijen, "An improved de-embedding technique for on-wafer high-frequency characterization, " IEEE Bipolar Circuits and Technology Meeting, pp. 188-191, 1991.