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Journal of the Korean Physical Society

Volumn 42, Issue SPEC., 2003, Pages

Characteristics of a GaN thick film on Si(111) grown by hydride vapor phase epitaxy using an AlN buffer layer

(9) Lee, H J a Lee, S W a Kim, C a Seo, J O a Cho, M W a Leem, S J a Hong, S U b Shim, K H b Kang, J Y b

a LG Electronics Inc (South Korea)

b Electronics and Telecommunications Research Institute (ETRI) (South Korea)

Author keywords

AlN buffer; GaN; Hydride vapor phase epitaxy; Molecular beam epitaxy; Si

Indexed keywords

EID: 0037306810 PISSN: 03744884 EISSN: None Source Type: Journal
DOI: None Document Type: Conference Paper

Times cited : (3)

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