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Volumn 43, Issue 6 B, 2004, Pages 3672-3679
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The magnitude of potential exposure-tool-induced critical dimension and overlay errors in double dipole lithography for the 65-nm and 45-nm technology nodes
b
ASML
(Netherlands)
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Author keywords
Critical dimension uniformity (CDU); Double dipole lithography (DDL); Image placement errors (IPEs); Low k1; Monte Carlo model; Overlay error; Pole intensity imbalance (PIB); Telecentricity
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Indexed keywords
CRITICAL DIMENSION UNIFORMITY (CDU);
DOUBLE DIPOLE LITHOGRAPHY (DDL);
IMAGE PLACEMENT ERRORS;
LOW-K1;
MONTE CARLO MODELS;
OVERLAY ERRORS;
POLE INTENSITY IMBALANCE (PIB);
TELECENTRICITY;
APPLICATION SPECIFIC INTEGRATED CIRCUITS;
COMPUTER SIMULATION;
ERROR ANALYSIS;
IMAGING TECHNIQUES;
MASKS;
MATHEMATICAL MODELS;
MONTE CARLO METHODS;
OPTICAL RESOLVING POWER;
OPTIMIZATION;
REFRACTIVE INDEX;
SHRINKAGE;
PHOTOLITHOGRAPHY;
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EID: 4444264399
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/JJAP.43.3672 Document Type: Conference Paper |
Times cited : (1)
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References (10)
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