Cryogenic 2-4 GHz ultra low noise amplifier

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2004, Pages 161-163

  Mellberg, Anders ^a   Wadefalk, Niklas ^b   Angelov, Iltcho ^a   Choumas, Emmanuil ^c   Kollberg, Erik ^a   Rorsman, Niklas ^a   Starski, Piotr ^a   Stenarson, Jörgen ^a   Zirath, Herbert ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b California Institute of Technology   (United States)

^c Unaxis Balzers Aktiengesellschaft   (Liechtenstein)

Author keywords

Cryogenic low noise amplifier; HEMT; InP; LNA; Noise temperature

Indexed keywords

BANDGAP; CRYOGENIC LOW NOISE AMPLIFIER; LNA; NOISE TEMPERATURE;

ACOUSTIC DEVICES; ACOUSTIC NOISE; BROADBAND AMPLIFIERS; CARRIER MOBILITY; FREQUENCIES; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM DOTS; SUPERCONDUCTING CABLES; TEMPERATURE CONTROL;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 4444258127     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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