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Volumn 2, Issue , 2001, Pages 2829-2842

Cryogenic, X-band and Ka-band InP HEMT based LNAs for the deep space network

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC VARIABLES CONTROL; AEROSPACE ENGINEERING; CRYOGENIC EQUIPMENT; HIGH ELECTRON MOBILITY TRANSISTORS; MATHEMATICAL MODELS; MICROPROCESSOR CHIPS; MICROWAVE AMPLIFIERS; RECEIVING ANTENNAS; SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0034847211     PISSN: 1095323X     EISSN: None     Source Type: Journal    
DOI: 10.1109/AERO.2001.931264     Document Type: Article
Times cited : (25)

References (20)
  • 4
    • 0003759526 scopus 로고
    • Cryogenic, low-noise high electron mobility transistor amplifiers for the deep space network
    • November 15
    • (1993) TDA Progress Report , vol.42 , Issue.115 , pp. 65-80
    • Bautista, J.J.1
  • 7
    • 84937077049 scopus 로고
    • Noise representation of noise in linear two ports
    • IRE Subcommittee 7.9 on Noise, January
    • (1960) Pro. IRE , vol.48 , pp. 69-74
  • 20
    • 0003829273 scopus 로고    scopus 로고
    • Two approaches to improvement of InGaAs/InAlAs/InP HEMTs
    • Item NPO-20341, February
    • (2000) NASA Tech Briefs , vol.25 , Issue.2
    • Lai, R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.