Cryogenic wide-band ultra-low-noise IF amplifiers operating at ultra-low DC power

IEEE Transactions on Microwave Theory and Techniques

Volumn 51, Issue 6, 2003, Pages 1705-1711

  Wadefalk, Niklas ^a   Mellberg, Anders ^b   Angelov, Iltcho ^b   Barsky, Michael E ^c   Bui, Stacey ^c   Choumas, Emmanuil ^b   Grundbacher, Ronald W ^c   Kollberg, Erik Ludvig ^b   Lai, Richard ^c   Rorsman, Niklas ^b   Starski, Piotr ^b   Stenarson, Jörgen ^b   Streit, Dwight C ^c   Zirath, Herbert ^b,d  

^a California Institute of Technology   (United States)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^c NORTHROP GRUMMAN CORPORATION   (United States)

^d ERICSSON RESEARCH   (Sweden)

Author keywords

Cryogenic electronics; DC power; GaAs; InP high electron mobility transistor (HEMT); Low noise amplifier (LNA); Noise temperature

Indexed keywords

CARRIER CONCENTRATION; CRYOGENIC EQUIPMENT; CRYOGENICS; ELECTRIC POWER SUPPLIES TO APPARATUS; ELECTRON MOBILITY; HIGH ELECTRON MOBILITY TRANSISTORS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SPURIOUS SIGNAL NOISE;

CRYOGENIC BROAD-BAND AMPLIFIERS; CRYOGENIC ELECTRONICS; NOISE MEASUREMENT; NOISE TEMPERATURE;

BROADBAND AMPLIFIERS;

EID: 0037600517     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2003.812570     Document Type: Article

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