Electrothermal models of transistors based on finite element analysis for radar applications

Thermomechanical Phenomena in Electronic Systems -Proceedings of the Intersociety Conference

Volumn 2, Issue , 2004, Pages 515-522

  Sommet, Raphael ^a   Chang, Christophe ^b   Dueme, Philippe ^b   Quere, Raymond ^a  

^a UNIVERSITY OF LIMOGES   (France)

^b THALES   (France)

Author keywords

3d thermal simulation; Pulsed power amplifiers; Reduction technique; Ritz vector; SPICE subcircuit; Transient temperature simulation

Indexed keywords

3D THERMAL SIMULATION; PULSED POWER AMPLIFIERS; REDUCTION TECHNIQUES; RITZ VECTOR; SPICE SUBCIRCUIT; TRANSIENT TEMPERATURE;

COMPUTER SIMULATION; FINITE ELEMENT METHOD; HETEROJUNCTION BIPOLAR TRANSISTORS; MATRIX ALGEBRA; POWER AMPLIFIERS; RADAR; SEMICONDUCTING GALLIUM ARSENIDE; SILICON;

TRANSISTORS;

EID: 4444256334     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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