Power GaInP/GaAs HBT MMICs

1994 24th European Microwave Conference, EUMA 1994

Volumn 2, Issue , 1994, Pages 1143-1148

  Delage, S L ^a   Floriot, D ^a   Blanck, H ^a   Cassette, S ^a   Chartier, E ^a   DiForte Poisson, M A ^a   Brylinski, C ^a   Perreal, Y ^a   Pons, D ^a   Roux, P ^a   Bourne, P ^a   Chaumas, P ^a  

^a THALES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EFFICIENCY; MICROWAVE AMPLIFIERS; POWER AMPLIFIERS;

BIAS CONDITIONS; DEVICE PERFORMANCE; DISCRETE DEVICES; MMIC AMPLIFIERS; OUTPUT MATCHING NETWORK; POWER-ADDED EFFICIENCY; PULSED CONDITIONS; RF FREQUENCIES;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 84897479557     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EUMA.1994.337367     Document Type: Conference Paper

References (5)

1. A. Khatibzadeh, W. Liu, T. Henderson, J. Sweder, and S. Pierce, "High efficiency X-Band HBT power amplifier ", 1994, IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium, 117.
2. F. Ali, A. Gupta M. Salib, B. Veasel, and D. Dawson "A 25 Ohm, 2W, 8-14 GHz HBT power MMIC with 20 dB gain and 40% power added efficiency ", 1994, IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium, 113.
3. M.J. Mondry and H. Kroemer "Heterojunction bipolar transistor using a (Ga, In)P emitter on a GaAs base, grown by molecular beam epitaxy ", 1985, IEEE Electron device letters, 175.
4. S.L. Delage, M.A. DiForte-Poisson, H. Blanck, C. Brylinski, E. Chartier, and P. Collot, "First microwave characterization of LP-MOCVD grown GalnP/GaAs self-aligned HBT ", 1991, Electronics Letters, 253.
5. C. Brylinski, M.A. DiForte-Poisson, S.L. Delage, H. Blanck, E. Chattier, and D. Pons, "Characterization of MOCVD grown GalnP/GaAs HBT structures giving state of the art microwave performances ", EMC1993, Santa Barbara, Ca, USA.