Thermal stability of spin dependent tunneling junctions pinned with irmn

IEEE Transactions on Magnetics

Volumn 35, Issue 5 PART 1, 1999, Pages 2886-2888

  Wang, D ^a   Tondra, M ^a   Nordman, C ^a   Daughton, J M ^a  

^a NVE CORPORATION   (United States)

Author keywords

Ic. 1999 ieee; Integration; Isolators; MR; MRAM; MTJ; SDT; Sensor; Thermal stability

Indexed keywords

ANNEALING; COERCIVE FORCE; INTEGRATED CIRCUIT MANUFACTURE; IRIDIUM ALLOYS; MAGNETORESISTANCE; MICROELECTRONIC PROCESSING; RANDOM ACCESS STORAGE; SENSORS; THERMODYNAMIC STABILITY; TUNNEL JUNCTIONS;

SPIN DEPENDENT TUNNELING JUNCTIONS;

MAGNETIC DEVICES;

EID: 0033183996     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/20.801014     Document Type: Article

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