New nonlinear device model for microwave power GaN HEMTs

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2004, Pages 51-54

  Cabral, Pedro Miguel ^a   Pedro, José Carlos ^a   Carvalho, Nuno Borges ^a  

^a UNIVERSITY OF AVEIRO   (Portugal)

Author keywords

Intermodulation Distortion; Modeling; Power Transistors

Indexed keywords

INTERMODULATION DISTORTION; MODELING; NON-LINEAR DEVICES; POWER TRANSISTORS;

COMPUTER SIMULATION; DIODES; GALLIUM NITRIDE; GATES (TRANSISTOR); HARMONIC ANALYSIS; INTERMODULATION MEASUREMENT; MATHEMATICAL MODELS; MICROWAVE POWER TRANSMISSION; OPTIMIZATION; PARAMETER ESTIMATION; SEMICONDUCTOR DEVICE MODELS; SIGNAL DISTORTION; TOPOLOGY; TRANSCONDUCTANCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 4444228906     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

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